摘要
For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source-drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m2 CCFL backlight illumination. The source-drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source-drain barrier height could effectively reduce the photo leakage current in off-state.
原文 | English |
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頁(從 - 到) | 470-474 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 516 |
發行號 | 2-4 |
DOIs | |
出版狀態 | Published - 3 12月 2007 |