Source-drain barrier height engineering for suppressing the a-Si:H TFTs photo leakage current

M. C. Wang, T. C. Chang*, Po-Tsun Liu, Y. Y. Li, F. S. Huang, Y. J. Mei, J. R. Chen

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source-drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m2 CCFL backlight illumination. The source-drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source-drain barrier height could effectively reduce the photo leakage current in off-state.

原文English
頁(從 - 到)470-474
頁數5
期刊Thin Solid Films
516
發行號2-4
DOIs
出版狀態Published - 3 12月 2007

指紋

深入研究「Source-drain barrier height engineering for suppressing the a-Si:H TFTs photo leakage current」主題。共同形成了獨特的指紋。

引用此