SONOS memories with embedded silicon nanocrystals in nitride

Mei-Chun Liu*, Tsung Yu Chiang, Po Yi Kuo, Ming Hong Chou, Yi Hong Wu, Hsin Chiang You, Ching Hwa Cheng, Sheng Hsien Liu, Wen Luh Yang, Tan Fu Lei, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N2O is better than O2 oxide. Retention property is improved when the thickness of N2O is increased to 3.0 nm.

原文English
文章編號075033
期刊Semiconductor Science and Technology
23
發行號7
DOIs
出版狀態Published - 1 7月 2008

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