摘要
Single-crystalline chalcopyrite CuInSe2 nanorods (CuInSe2NRs) of 50-100 nm in diameter and up to a few micrometers in length have been synthesized solvothermally. High-resolution transmission electron microscopic
images of the CuInSe2NRs reveal the d-spacing of 0.335 nm for the (112) crystalline planes and a growth direction along [331]. The near-infrared absorption spectrum of the chalcopyrite CuInSe2NRs shows a peak
maximum at 1162 nm and an onset at 1262 nm, indicating no apparent blue-shift compared with those of Cu-rich CuInSe2 thin films. An intense peak at 175.1 cm-1 in the room-temperature Raman scattering spectrum
of CuInSe2NRs corresponds to the A1 phonon mode of tetragonal CuInSe2 chalcopyrite. The narrower full width at half-maximum (fwhm) of 9.5 cm-1 for CuInSe2NRs, in comparison with fwhm ∼ 12 cm-1 for CuInSe2 films, indicates a uniform size distribution and single crystallization in the nanorods. Analysis of the photoluminescence from the single-crystalline CuInSe2NRs measured at 10 K has categorized the emission into seven groups of transitions as characterized by free excitons, bound excitons, conduction band to acceptor levels, and bound excitons at different defects.
images of the CuInSe2NRs reveal the d-spacing of 0.335 nm for the (112) crystalline planes and a growth direction along [331]. The near-infrared absorption spectrum of the chalcopyrite CuInSe2NRs shows a peak
maximum at 1162 nm and an onset at 1262 nm, indicating no apparent blue-shift compared with those of Cu-rich CuInSe2 thin films. An intense peak at 175.1 cm-1 in the room-temperature Raman scattering spectrum
of CuInSe2NRs corresponds to the A1 phonon mode of tetragonal CuInSe2 chalcopyrite. The narrower full width at half-maximum (fwhm) of 9.5 cm-1 for CuInSe2NRs, in comparison with fwhm ∼ 12 cm-1 for CuInSe2 films, indicates a uniform size distribution and single crystallization in the nanorods. Analysis of the photoluminescence from the single-crystalline CuInSe2NRs measured at 10 K has categorized the emission into seven groups of transitions as characterized by free excitons, bound excitons, conduction band to acceptor levels, and bound excitons at different defects.
原文 | American English |
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頁(從 - 到) | 17370-17374 |
期刊 | Journal of Physical Chemistry B |
卷 | 110 |
出版狀態 | Published - 2006 |