Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Che Chia Chang, Po-Tsun Liu*, Chen Yu Chien, Yang Shun Fan

*此作品的通信作者

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

This study demonstrates the integration of a thin film transistor (TFT) and resistive random-access memory (RRAM) to form a one-transistor-one-resistor (1T1R) configuration. With the concept of the current conducting direction in RRAM and TFT, a triple-layer stack design of Pt/InGaZnO/Al2O3 is proposed for both the switching layer of RRAM and the channel layer of TFT. This proposal decreases the complexity of fabrication and the numbers of photomasks required. Also, the robust endurance and stable retention characteristics are exhibited by the 1T1R architecture for promising applications in memory-embedded flat panel displays.

原文English
文章編號172101
期刊Applied Physics Letters
112
發行號17
DOIs
出版狀態Published - 23 4月 2018

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