摘要
We report efficient quantum dot light-emitting diodes (QLEDs) using sizable 13-nm green-emission quantum dots as the emissive layer and solution-processable MoOx as the hole injection layer (HIL). The MoOx HIL was prepared by the decomposition of a solution of ammonium molybdate tetrahydrate at 80 °C under ambient conditions, further spin-coated onto an indium tin oxide substrate to facilitate hole injection. Compared with the reference sample with a polymeric hole injection material poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the sMoOx film showed a higher work function of 5.6 eV, better transparency, and smoother surface morphology. The stable QLED with optimized MoOx film thickness achieved a higher maximum current efficiency of 10.8 cd/A at a lower turn-on voltage of 2.2 V versus the one with a PEDOT:PSS HIL, 9.9 cd/A and 2.9 V, respectively. Moreover, a small leakage current in sMoOx-device was found, which was attributed to the better surface morphology of sMoOx.
原文 | English |
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文章編號 | 7486960 |
頁(從 - 到) | 2156-2159 |
頁數 | 4 |
期刊 | IEEE Photonics Technology Letters |
卷 | 28 |
發行號 | 20 |
DOIs | |
出版狀態 | Published - 15 10月 2016 |