Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation

Peng Shiu Chen, Tsung-Eong Hsien, Chih Hsun Chu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

This work investigated the ion implantation induced solid phase epitaxy (SPE) of Si thin films prepared by low pressure chemical vapor deposition (LPCVD). Previous studies indicate that the residual layer at the interface between the Si thin film and single crystalline substrate is the major obstacle to the SPE process of Si film. In this work, Ge+ and Si+ ion were implanted to completely amorphize the Si film prepared by LPCVD. Ion implantation also mixed the interfacial oxide layer and its effects on subsequent epitaxial growth of Si film subjected to various annealing conditions were discussed as well. In addition, the specimen surface was modified by inductive couple plasma (ICP) process. The ICP modification using nitrogen gas could form a vacancy source on the sample surface to enhance the atomic diffusion rate and change the stress state in the vicinity of surface, thereby accelerating the SPE process.

原文English
頁(從 - 到)274-282
頁數9
期刊Thin Solid Films
353
發行號1
DOIs
出版狀態Published - 29 九月 1999

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