Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors

M. C. Chen*, S. H. Ku, C. T. Chan, Ta-Hui Wang

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The impact of oxide soft breakdown location on threshold voltage hysteresis in a partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors, with an ultrathin oxide was investigated. In a drain-edge breakdown device, the excess holes resulting from band-to-band tunneling flow to the floating body cause threshold variation in drain bias switching. Whereas, in channel breakdown device, enhanced hysteresis is observed during gate bias switching because of increased valence band electron tunneling. The investigation reveal that softbreakdown effect is a reliable issue in silicon-on-insulator devices.

原文English
頁(從 - 到)2297-2300
頁數4
期刊Journal of Applied Physics
96
發行號4
DOIs
出版狀態Published - 15 八月 2004

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