SMALL GEOMETRY MOS TRANSISTOR MEASUREMENTS AND OBSERVED SHORT AND NARROW CHANNEL EFFECTS.

Summary form only given. The effect of short and narrow channels on MOS transistor capacitance are discussed. To identify the short-channel effect, transistors with 100 mu m width and L//e //f //f of 7. 8 mu m, 3. 8 mu m, 1. 8 mu m, and 0. 8 mu m, were measured. Just above the threshold voltage, C//g //d decreases. This may be due to the shielding effect of the channel connected to source. The most significant short-channel effect is that the distinction between the saturation and linear region becomes vague. This agrees with the dc characteristics. As a result, C//g //d begins to increase in the saturation region. Narrow-channel devices with L = 100 mu m and several W//e //f //f from 9. 2 mu m to 1. 2 mu m were measured and normalized. Normalized C//g //s for the narrow device is larger because of the fringing portion along the field edge. In addition, the narrow C//g //s increases with V//g significantly. Presumably this is due to the inversion layer width increasing with gate voltage.