Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4

P. H. Liao*, T. C. Hsu, K. H. Chen, T. H. Cheng, T. M. Hsu, C. C. Wang, T. George, Pei-Wen Li

*此作品的通信作者

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO2 and Si3N4 layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be generated depending on whether the dot is embedded within either a Si3N4 or a SiO2 layer. Raman measurements reveal significant anharmonicity for smaller Ge dots and possible distortions of the diamond cubic lattice as evidenced by the measured Grünesien parameters and confirmed by their transmission electron diffraction patterns. Two completely different mechanisms are proposed to explain the formation of the tensile and compressive strain states, respectively.

原文English
文章編號172106
期刊Applied Physics Letters
105
發行號17
DOIs
出版狀態Published - 27 10月 2014

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