Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

Sk Ziaur Rahaman*, Yi Hui Su, Guan Long Chen, Fang Ming Chen, Jeng Hua Wei, Tuo Hung Hou, Shyh Shyuan Sheu, Chih I. Wu, Duan Lee Deng, I. Jung Wang, Ding Yeong Wang, Chi Feng Pai, Yu Chen Hsin, Shan Yi Yang, Hsin Han Lee, Yao Jen Chang, Yi Ching Kuo

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.
原文English
文章編號8984374
頁(從 - 到)163-169
頁數7
期刊IEEE Journal of the Electron Devices Society
8
DOIs
出版狀態Published - 1 1月 2020

指紋

深入研究「Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity」主題。共同形成了獨特的指紋。

引用此