Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

Wen Che Tsai; Feng Yi Lin; Wen Cheng Ke; Shu Kai Lu; Shun-Jen Cheng; Wu-Ching Chou; Wei-Kuo Chen; Ming Chih Lee; Wen-Hao Chang

doi:10.1063/1.3064166

Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

Wen Che Tsai, Feng Yi Lin, Wen Cheng Ke, Shu Kai Lu, Shun-Jen Cheng, Wu-Ching Chou, Wei-Kuo Chen, Ming Chih Lee, Wen-Hao Chang^*

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E₂ mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10^-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

原文	English
文章編號	063102
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	94
發行號	6
DOIs	https://doi.org/10.1063/1.3064166
出版狀態	Published - 9 2月 2009

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abstract = "We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.",

author = "Tsai, {Wen Che} and Lin, {Feng Yi} and Ke, {Wen Cheng} and Lu, {Shu Kai} and Shun-Jen Cheng and Wu-Ching Chou and Wei-Kuo Chen and Lee, {Ming Chih} and Wen-Hao Chang",

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T1 - Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

AU - Tsai, Wen Che

AU - Lin, Feng Yi

AU - Ke, Wen Cheng

AU - Lu, Shu Kai

AU - Cheng, Shun-Jen

AU - Chou, Wu-Ching

AU - Chen, Wei-Kuo

AU - Lee, Ming Chih

AU - Chang, Wen-Hao

PY - 2009/2/9

Y1 - 2009/2/9

N2 - We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

AB - We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

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VL - 94

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 063102

ER -

Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

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