TY - GEN
T1 - Single-Voltage-Supply pHEMT/mHEMT 2.4 and 5.8 GHz LNAs Using Power Constrained Design
AU - Meng, Chinchun
AU - Lin, Chung Yo
AU - Huang, Guo Wei
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - 2.4-GHz and 5.8-GHz single-voltage-supply LNAs using depletion-mode pHEMT and mHEMT technologies are demonstrated in this paper. Both pHEMT and mHEMT inductively source-degenerated LNAs with a common-drain output stage are designed around 2.4-GHz and 5.8-GHz for a single-band application. The current consumption of 11 mA at3 V supply voltage is intentionally designed for all of the LNAs to make a performance comparison. At 2.4-GHz, the 2.4-GHz pHEMT LNA has 19 dB gain and NF=1.64dB while the 2.4-GHz mHEMT LNA has 19 dB gain and NF=1.18dB. At 5.8-GHz, the 5.8-GHz pHEMT LNA has 16 dB gain and NF=1.93dB while the 5.8-GHz mHEMT LNA has 19 dB gain and NF=1.87dB. The experimental results imply that LNAs with mHEMT technology have better noise and gain performance than those with pHEMT technology.
AB - 2.4-GHz and 5.8-GHz single-voltage-supply LNAs using depletion-mode pHEMT and mHEMT technologies are demonstrated in this paper. Both pHEMT and mHEMT inductively source-degenerated LNAs with a common-drain output stage are designed around 2.4-GHz and 5.8-GHz for a single-band application. The current consumption of 11 mA at3 V supply voltage is intentionally designed for all of the LNAs to make a performance comparison. At 2.4-GHz, the 2.4-GHz pHEMT LNA has 19 dB gain and NF=1.64dB while the 2.4-GHz mHEMT LNA has 19 dB gain and NF=1.18dB. At 5.8-GHz, the 5.8-GHz pHEMT LNA has 16 dB gain and NF=1.93dB while the 5.8-GHz mHEMT LNA has 19 dB gain and NF=1.87dB. The experimental results imply that LNAs with mHEMT technology have better noise and gain performance than those with pHEMT technology.
KW - LNA
KW - metamorphic high electron mobility transistor (mHEMT)
KW - pseudomorphic high electron mobility transistor (pHEMT)
KW - single-voltage-supply
UR - http://www.scopus.com/inward/record.url?scp=85186757757&partnerID=8YFLogxK
U2 - 10.1109/SiRF59913.2024.10438641
DO - 10.1109/SiRF59913.2024.10438641
M3 - Conference contribution
AN - SCOPUS:85186757757
T3 - 2024 IEEE Radio and Wireless Week, RWW 2024 - 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024
SP - 98
EP - 101
BT - 2024 IEEE Radio and Wireless Week, RWW 2024 - 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024
Y2 - 21 January 2024 through 24 January 2024
ER -