@inproceedings{8e295ef856a74bd4be33f8dcbb7ec8d6,
title = "Single-Voltage-Supply pHEMT/mHEMT 2.4 and 5.8 GHz LNAs Using Power Constrained Design",
abstract = "2.4-GHz and 5.8-GHz single-voltage-supply LNAs using depletion-mode pHEMT and mHEMT technologies are demonstrated in this paper. Both pHEMT and mHEMT inductively source-degenerated LNAs with a common-drain output stage are designed around 2.4-GHz and 5.8-GHz for a single-band application. The current consumption of 11 mA at3 V supply voltage is intentionally designed for all of the LNAs to make a performance comparison. At 2.4-GHz, the 2.4-GHz pHEMT LNA has 19 dB gain and NF=1.64dB while the 2.4-GHz mHEMT LNA has 19 dB gain and NF=1.18dB. At 5.8-GHz, the 5.8-GHz pHEMT LNA has 16 dB gain and NF=1.93dB while the 5.8-GHz mHEMT LNA has 19 dB gain and NF=1.87dB. The experimental results imply that LNAs with mHEMT technology have better noise and gain performance than those with pHEMT technology.",
keywords = "LNA, metamorphic high electron mobility transistor (mHEMT), pseudomorphic high electron mobility transistor (pHEMT), single-voltage-supply",
author = "Chinchun Meng and Lin, {Chung Yo} and Huang, {Guo Wei}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 24th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024 ; Conference date: 21-01-2024 Through 24-01-2024",
year = "2024",
doi = "10.1109/SiRF59913.2024.10438641",
language = "English",
series = "2024 IEEE Radio and Wireless Week, RWW 2024 - 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "98--101",
booktitle = "2024 IEEE Radio and Wireless Week, RWW 2024 - 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024",
address = "United States",
}