@inproceedings{b5e02938cd1741d194191ba3fe88f5e8,
title = "Single-pole double-throw switch using stacked-FET configuration at millimeter wave frequencies",
abstract = "In this paper, we present single-pole double-throw (SPDT) switch at Ka-band for phased array front-end applications. The proposed switch composed of three shunt arms and a quarter-wave length impedance transformer in series on each branch. The stacked-FET configuration was adopted to enhance the power handling capability. Implemented with 0.15um GaAs pHEMT technology by WIN Semiconductor, the overall chip size was 2 mm by 1 mm. The measured insertion loss was less than 3 dB with better than 25 dB isolation from 15 GHz to 35 GHz. The proposed configuration also featured an input 1-dB compression point of 26 dBm.",
keywords = "PHEMT, Power handling, SPDT switch, Stacked-FET",
author = "Mei, {Peng I.} and Wu, {Guan Wei} and Hsu, {Heng Shou} and Huang, {Ting Jui} and Tsao, {Yi Fan} and Chiang, {Che Yang} and Heng-Tung Hsu",
note = "Publisher Copyright: {\textcopyright} 2018 IEICE; 30th Asia-Pacific Microwave Conference, APMC 2018 ; Conference date: 06-11-2018 Through 09-11-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.23919/APMC.2018.8617164",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "791--793",
booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings",
address = "United States",
}