Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

L. D. Huang; J. Y. Wu; J. P. Wang; Chia-Ming Tsai; Y. H. Huang; D. R. Wu; Sheng-Di Lin

doi:10.1364/OE.25.013333

Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

L. D. Huang, J. Y. Wu, J. P. Wang, Chia-Ming Tsai, Y. H. Huang, D. R. Wu, Sheng-Di Lin

電子研究所

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.

原文	English
頁（從 - 到）	13333-13339
頁數	7
期刊	Optics Express
卷	25
發行號	12
DOIs	https://doi.org/10.1364/OE.25.013333
出版狀態	Published - 12 6月 2017

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abstract = "We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.",

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AU - Huang, Y. H.

AU - Wu, D. R.

AU - Lin, Sheng-Di

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AB - We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-μm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.

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Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

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