Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

H. P.D. Yang; I. C. Hsu; F. I. Lai; Kuo-Jui Lin; R. S. Hsiao; N. A. Maleev; S. A. Blokhin; Hao-Chung Kuo; S. C. Wang; J. Y. Chi

doi:10.1088/0268-1242/21/8/033

Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

H. P.D. Yang^*, I. C. Hsu, F. I. Lai, Kuo-Jui Lin, R. S. Hsiao, N. A. Maleev, S. A. Blokhin, Hao-Chung Kuo, S. C. Wang, J. Y. Chi

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研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

An InGaAs submonolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fibre-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate deposition of InAs (<1 ML) and GaAs. Single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range.

原文	English
文章編號	033
頁（從 - 到）	1176-1180
頁數	5
期刊	Semiconductor Science and Technology
卷	21
發行號	8
DOIs	https://doi.org/10.1088/0268-1242/21/8/033
出版狀態	Published - 11 7月 2006

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10.1088/0268-1242/21/8/033

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title = "Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs",

abstract = "An InGaAs submonolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fibre-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate deposition of InAs (<1 ML) and GaAs. Single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range.",

author = "Yang, {H. P.D.} and Hsu, {I. C.} and Lai, {F. I.} and Kuo-Jui Lin and Hsiao, {R. S.} and Maleev, {N. A.} and Blokhin, {S. A.} and Hao-Chung Kuo and Wang, {S. C.} and Chi, {J. Y.}",

year = "2006",

month = jul,

day = "11",

doi = "10.1088/0268-1242/21/8/033",

language = "English",

volume = "21",

pages = "1176--1180",

journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

AU - Yang, H. P.D.

AU - Hsu, I. C.

AU - Lai, F. I.

AU - Lin, Kuo-Jui

AU - Hsiao, R. S.

AU - Maleev, N. A.

AU - Blokhin, S. A.

AU - Kuo, Hao-Chung

AU - Wang, S. C.

AU - Chi, J. Y.

PY - 2006/7/11

Y1 - 2006/7/11

N2 - An InGaAs submonolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fibre-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate deposition of InAs (<1 ML) and GaAs. Single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range.

AB - An InGaAs submonolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fibre-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate deposition of InAs (<1 ML) and GaAs. Single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range.

UR - http://www.scopus.com/inward/record.url?scp=33749056854&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/8/033

DO - 10.1088/0268-1242/21/8/033

M3 - Article

AN - SCOPUS:33749056854

SN - 0268-1242

VL - 21

SP - 1176

EP - 1180

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 033

ER -

Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs

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