Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Ru Shang Hsiao; Jyh Shyang Wang; Kun Feng Lin; Li Wei; Hui Yu Liu; Chiu Yueh Liang; Chih Ming Lai; Alexey R. Kovsh; Nikolay A. Maleev; Jim Y. Chi; Jenn-Fang Chen

doi:10.1143/JJAP.43.L1555

Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Ru Shang Hsiao^*
, Jyh Shyang Wang
, Kun Feng Lin
, Li Wei
, Hui Yu Liu
, Chiu Yueh Liang
, Chih Ming Lai
, Alexey R. Kovsh
, Nikolay A. Maleev
, Jim Y. Chi
, Jenn-Fang Chen

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

原文	English
頁（從 - 到）	L1555-L1557
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	43
發行號	12 A
DOIs	https://doi.org/10.1143/JJAP.43.L1555
出版狀態	Published - 1 12月 2004

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10.1143/JJAP.43.L1555

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Hsiao, R. S., Wang, J. S., Lin, K. F., Wei, L., Liu, H. Y., Liang, C. Y., Lai, C. M., Kovsh, A. R., Maleev, N. A., Chi, J. Y., & Chen, J.-F. (2004). Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 2: Letters, 43(12 A), L1555-L1557. https://doi.org/10.1143/JJAP.43.L1555

@article{6c8b2aac815343fbbcc17a4642505aac,

title = "Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy",

abstract = "The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.",

keywords = "InGaAsN/GaAs quantum wells, Molecular beam epitaxy, Vertical cavity surface emitting lasers",

author = "Hsiao, \{Ru Shang\} and Wang, \{Jyh Shyang\} and Lin, \{Kun Feng\} and Li Wei and Liu, \{Hui Yu\} and Liang, \{Chiu Yueh\} and Lai, \{Chih Ming\} and Kovsh, \{Alexey R.\} and Maleev, \{Nikolay A.\} and Chi, \{Jim Y.\} and Jenn-Fang Chen",

year = "2004",

month = dec,

day = "1",

doi = "10.1143/JJAP.43.L1555",

language = "English",

volume = "43",

pages = "L1555--L1557",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12 A",

}

TY - JOUR

T1 - Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

AU - Hsiao, Ru Shang

AU - Wang, Jyh Shyang

AU - Lin, Kun Feng

AU - Wei, Li

AU - Liu, Hui Yu

AU - Liang, Chiu Yueh

AU - Lai, Chih Ming

AU - Kovsh, Alexey R.

AU - Maleev, Nikolay A.

AU - Chi, Jim Y.

AU - Chen, Jenn-Fang

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

AB - The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

KW - InGaAsN/GaAs quantum wells

KW - Molecular beam epitaxy

KW - Vertical cavity surface emitting lasers

UR - https://www.scopus.com/pages/publications/19944433438

U2 - 10.1143/JJAP.43.L1555

DO - 10.1143/JJAP.43.L1555

M3 - Article

AN - SCOPUS:19944433438

SN - 0021-4922

VL - 43

SP - L1555-L1557

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 12 A

ER -

Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

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