Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

Ru Shang Hsiao*, Jyh Shyang Wang, Kun Feng Lin, Li Wei, Hui Yu Liu, Chiu Yueh Liang, Chih Ming Lai, Alexey R. Kovsh, Nikolay A. Maleev, Jim Y. Chi, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

原文English
頁(從 - 到)L1555-L1557
期刊Japanese Journal of Applied Physics, Part 2: Letters
43
發行號12 A
DOIs
出版狀態Published - 1 12月 2004

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