摘要
The growth by molecular-beam-epitaxy of high-quality 1.3 μm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.
原文 | English |
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頁(從 - 到) | L1555-L1557 |
期刊 | Japanese Journal of Applied Physics, Part 2: Letters |
卷 | 43 |
發行號 | 12 A |
DOIs | |
出版狀態 | Published - 1 12月 2004 |