@inproceedings{4d6051a837554b7e8b3c58e284d36a5b,
title = "Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling",
abstract = "We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bi-layer of Si 3N 4/SiO 2. The fabricated Ge QD single electron transistor exhibits clear Coulomb staircase and Coulomb diamond behaviors at T = 120-300 K.",
author = "Chen, {I. H.} and Chen, {K. H.} and Pei-Wen Li",
year = "2012",
doi = "10.1109/SNW.2012.6243292",
language = "English",
isbn = "9781467309943",
series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",
booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",
note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",
}