A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.
|頁（從 - 到）||2824-2828|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 11月 2002|