Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

Jeng-Tzong Sheu; K. S. You; C. H. Wu; Kow-Ming Chang

doi:10.1116/1.1523017

Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

Jeng-Tzong Sheu^*, K. S. You, C. H. Wu, Kow-Ming Chang

^*此作品的通信作者

奈米科技碩博班

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.

原文	English
頁（從 - 到）	2824-2828
頁數	5
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	6
DOIs	https://doi.org/10.1116/1.1523017
出版狀態	Published - 11月 2002

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10.1116/1.1523017

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title = "Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching",

abstract = "A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.",

author = "Jeng-Tzong Sheu and You, {K. S.} and Wu, {C. H.} and Kow-Ming Chang",

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AU - Sheu, Jeng-Tzong

AU - You, K. S.

AU - Wu, C. H.

AU - Chang, Kow-Ming

PY - 2002/11

Y1 - 2002/11

N2 - A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.

AB - A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.

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DO - 10.1116/1.1523017

M3 - Article

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

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