Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang; S. J. Chang; Cheng-Huang Kuo; C. H. Wu; C. H. Ko; Clement H. Wann; Y. C. Cheng; W. J. Lin

doi:10.1149/1.3569753

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

C. C. Huang, S. J. Chang, Cheng-Huang Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng, W. J. Lin

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6 引文斯高帕斯（Scopus）

摘要

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO₂ recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

原文	English
頁（從 - 到）	H626-H629
期刊	Journal of the Electrochemical Society
卷	158
發行號	6
DOIs	https://doi.org/10.1149/1.3569753
出版狀態	Published - 2011

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abstract = "The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.",

author = "Huang, {C. C.} and Chang, {S. J.} and Cheng-Huang Kuo and Wu, {C. H.} and Ko, {C. H.} and Wann, {Clement H.} and Cheng, {Y. C.} and Lin, {W. J.}",

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AU - Huang, C. C.

AU - Chang, S. J.

AU - Kuo, Cheng-Huang

AU - Wu, C. H.

AU - Ko, C. H.

AU - Wann, Clement H.

AU - Cheng, Y. C.

AU - Lin, W. J.

PY - 2011

Y1 - 2011

N2 - The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

AB - The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95 using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate.

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DO - 10.1149/1.3569753

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SN - 0013-4651

VL - 158

SP - H626-H629

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

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