Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung; Yu Ming Pan; Nein Chih Lin; Bo Jheng Shih; Chih Chao Yang; Chang Hong Shen; Po Tsang Huang; Huang Chung Cheng; Kuan Neng Chen; Chenming Hu

doi:10.1109/LED.2023.3275181

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

Hao Tung Chung, Yu Ming Pan, Nein Chih Lin, Bo Jheng Shih, Chih Chao Yang, Chang Hong Shen, Po Tsang Huang, Huang Chung Cheng, Kuan Neng Chen, Chenming Hu

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400°C, therefore allowing monolithic 3D integration of ICs.

原文	English
頁（從 - 到）	1
頁數	1
期刊	Ieee Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2023.3275181
出版狀態	Accepted/In press - 2023

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10.1109/LED.2023.3275181

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@article{95b23a2c9b8f432892b0360111a9e1ba,

title = "Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs",

abstract = "This paper proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400°C, therefore allowing monolithic 3D integration of ICs.",

keywords = "Epitaxial growth, epitaxy, FinFETs, Germanium, Germanium, Grain boundaries, Integrated circuits, laser crystallization, low thermal budget, Monolithic 3D, Silicon, single-crystal, Three-dimensional displays",

author = "Chung, {Hao Tung} and Pan, {Yu Ming} and Lin, {Nein Chih} and Shih, {Bo Jheng} and Yang, {Chih Chao} and Shen, {Chang Hong} and Huang, {Po Tsang} and Cheng, {Huang Chung} and Chen, {Kuan Neng} and Chenming Hu",

note = "Publisher Copyright: IEEE",

year = "2023",

doi = "10.1109/LED.2023.3275181",

language = "English",

pages = "1",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

AU - Chung, Hao Tung

AU - Pan, Yu Ming

AU - Lin, Nein Chih

AU - Shih, Bo Jheng

AU - Yang, Chih Chao

AU - Shen, Chang Hong

AU - Huang, Po Tsang

AU - Cheng, Huang Chung

AU - Chen, Kuan Neng

AU - Hu, Chenming

N1 - Publisher Copyright: IEEE

PY - 2023

Y1 - 2023

N2 - This paper proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400°C, therefore allowing monolithic 3D integration of ICs.

AB - This paper proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400°C, therefore allowing monolithic 3D integration of ICs.

KW - Epitaxial growth

KW - epitaxy

KW - FinFETs

KW - Germanium

KW - Grain boundaries

KW - Integrated circuits

KW - laser crystallization

KW - low thermal budget

KW - Monolithic 3D

KW - Silicon

KW - single-crystal

KW - Three-dimensional displays

UR - http://www.scopus.com/inward/record.url?scp=85159816331&partnerID=8YFLogxK

U2 - 10.1109/LED.2023.3275181

DO - 10.1109/LED.2023.3275181

M3 - Article

AN - SCOPUS:85159816331

SN - 0741-3106

SP - 1

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

ER -

Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

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