Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation

Tien-Sheng Chao; Tsung Hsien Chang

doi:10.1109/TED.2003.818819

Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH₃ and N₂O Nitridation

Tien-Sheng Chao^*, Tsung Hsien Chang

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q_BD) and trapping rate. The Q _BD of interpoly-oxide can be reached as high as 35 C/cm². This scheme is very promising for nonvolatile memory devices.

原文	English
頁（從 - 到）	2300-2302
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	11
DOIs	https://doi.org/10.1109/TED.2003.818819
出版狀態	Published - 1 11月 2003

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10.1109/TED.2003.818819

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title = "Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation",

abstract = "This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.",

keywords = "Interpoly-oxide, NO, NH, Nitridation, Nonvolatile-memory, Tunneling oxide",

author = "Tien-Sheng Chao and Chang, {Tsung Hsien}",

year = "2003",

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AU - Chao, Tien-Sheng

AU - Chang, Tsung Hsien

PY - 2003/11/1

Y1 - 2003/11/1

N2 - This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

AB - This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

KW - Interpoly-oxide

KW - NO

KW - NH

KW - Nitridation

KW - Nonvolatile-memory

KW - Tunneling oxide

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation

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Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH₃ and N₂O Nitridation