Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH3 and N2O Nitridation

Tien-Sheng Chao*, Tsung Hsien Chang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The Q BD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

原文English
頁(從 - 到)2300-2302
頁數3
期刊IEEE Transactions on Electron Devices
50
發行號11
DOIs
出版狀態Published - 1 十一月 2003

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