TY - GEN
T1 - Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
AU - Chao, Tien-Sheng
AU - Chang, Tsung Hsien
PY - 2003/1/1
Y1 - 2003/1/1
N2 - In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown fded, charge to breakdown (QED) and trapping rate The QBD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.
AB - In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown fded, charge to breakdown (QED) and trapping rate The QBD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.
UR - http://www.scopus.com/inward/record.url?scp=84944674105&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2003.1252601
DO - 10.1109/VTSA.2003.1252601
M3 - Conference contribution
AN - SCOPUS:84944674105
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 255
EP - 258
BT - VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
Y2 - 6 October 2003 through 8 October 2003
ER -