@inproceedings{854ade070658406a8f0773f073237075,
title = "Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures",
abstract = "In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.",
keywords = "Ciss, Coss, Crss, Qg, SiC UMOSFETs, split-gate",
author = "Jiang, {Jheng Yi} and Huang, {Chih Fang} and Wu, {Tian Li} and Feng Zhao",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731332",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "401--403",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "美國",
note = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
}