Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

Jheng Yi Jiang, Chih Fang Huang, Tian Li Wu, Feng Zhao

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this paper, we systematically study the effect of gate structures of a 4H-SiC UMOSFET on its performance, focusing on the fast switching performance. Based on the simulation results, DC and AC characteristics of different gate structures are compared. It is found that a structure of UMOSFET, combining a grounded split-gate (SG), a trench bottom protection P+ shielding layer (PS) and a current spreading layer (CSL), yields the best compromise.

原文English
主出版物標題2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面401-403
頁數3
ISBN(電子)9781538665084
DOIs
出版狀態Published - 3月 2019
事件2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
持續時間: 12 3月 201915 3月 2019

出版系列

名字2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
國家/地區Singapore
城市Singapore
期間12/03/1915/03/19

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