Simulation of the nanoscale interconnects within a spin-resolved electron transport model

A. Useinov*, H. H. Lin, N. Useinov, L. Tagirov

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The work represents the theoretical modeling of the electrical conductance in the nanoscale interconnects within approach of the extended point-like contact (PC) model. The approach describes a diffusive, quasi-ballistic, ballistic and quantum regimes of the spinresolved conductance, that is important for the development of the heterojunction models, including 2D -3D interconnects. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to a purely quantum transport regimes without residual terms. The model of the PC assumes that the contact area can be replaced by a complex quantum device, e.g. single tunnel junction, narrow magnetic domain wall (DW), vacuum gap between tip and surface, source to drain transistor's channel, etc. The potential energy landscape of the device determines its electrical properties.

原文English
主出版物標題2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面72-73
頁數2
ISBN(電子)9781728142326
DOIs
出版狀態Published - 八月 2020
事件2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
持續時間: 10 八月 202013 八月 2020

出版系列

名字2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區Taiwan
城市Hsinchu
期間10/08/2013/08/20

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