@inproceedings{b0d7ce4602f84cbea01f1c608df240d8,
title = "Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell",
abstract = "In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition.",
author = "Wang, {Hsun Wen} and Peichen Yu and Han, {Hau Vei} and Chien-Chung Lin and Hao-Chung Kuo and Shiuan-Huei Lin",
year = "2013",
month = jan,
day = "2",
doi = "10.1109/INEC.2013.6465979",
language = "English",
isbn = "978-1-4673-4841-6",
series = "International Nanoelectronics Conference",
pages = "143--145",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)",
note = "null ; Conference date: 02-01-2013 Through 04-01-2013",
}