Simulation and characterization of CH₃NH₃SnI₃-based perovskite solar cells with different Cu-based hole transporting layers

Perovskite solar cells (PSCs) are extremely attractive due to having low processing cost, easy solution processing, and excellent light-harvesting characteristics along with their recent rapid development. PCSs are made of different layers that affect the performance of the devices. Hole transporting layers (HTLs) are one of the layers that have a significant effect on conducting the carriers and enhancing the efficiency of PSCs. In the present study, the results of computational simulation using the SCAPS-1D software for devices made of the MASnI₃ perovskite light absorber and different inorganic Cu-based HTLs, such as CuSCN, Cu₂O, CuO, CuI, SrCu₂O₂, and CuSbS₂, are presented, in comparison with the standard contain Spiro-OMeTAD-based device. The modification effects of the perovskite absorber layer thickness, total defect density (N_t), the band gap of the absorber, the thickness of HTLs, and the operational temperature on the characteristic photovoltaic parameters were analyzed. The highest power conversion efficiency (PCE) was obtained to be 32.13%, with a fill factor (FF) of 87.08%, open-circuit voltage (V_OC) of 1.07 V, and short-circuit current density (J_SC) of 34.35 mA cm⁻², for CuI as an efficient HTL in comparison with the other HTLs. We believe that the current theoretical results provided profound insights into the development of new high-performance, low-cost, and lead-free PSCs with Cu-based HTLs.