Simulation and analysis of 1300-nm in_0.4Ga_0.6as _0.986N_0.014/GaAs_1-xN_x quantum-well lasers with various GaAs_1-xN_x strain compensated barriers

In this article, the laser performance of the 1300-nm In _0.4Ga_0.6As_0.986N_0.014/GaAs _1-xN_x quantum well lasers with various GaAs _1-xN_x strain compensated barriers (x=0%, 0.5%, 1%, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T₀ values of 110 K and 94 K at the temperature range of 300-370 K As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the T₀ value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In _0.4Ga_0.6As_0.986N_0.014 QW and GaAs_1-xN_x barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs_1-xN_x quantum-well lasers are also investigated.