Simulation and analysis of 1300-nm in0.4Ga0.6as 0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers

Yi An Chang*, Hao-Chung Kuo, Ya Hsien Chang, Shing Chung Wang, Li Hong Laih

*此作品的通信作者

研究成果: Conference article同行評審

摘要

In this article, the laser performance of the 1300-nm In 0.4Ga0.6As0.986N0.014/GaAs 1-xNx quantum well lasers with various GaAs 1-xNx strain compensated barriers (x=0%, 0.5%, 1%, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T0 values of 110 K and 94 K at the temperature range of 300-370 K As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the T0 value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In 0.4Ga0.6As0.986N0.014 QW and GaAs1-xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1-xNx quantum-well lasers are also investigated.

原文English
文章編號08
頁(從 - 到)40-48
頁數9
期刊Proceedings of SPIE - The International Society for Optical Engineering
5628
DOIs
出版狀態Published - 2005
事件Semiconductor Lasers and Applications II - Beijing, China
持續時間: 8 11月 20049 11月 2004

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