Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

Yi Cheng Chen, Shun Wei Tang, Pin Hau Lin, Zheng Chen Chen, Ming Hao Lu, Kuo Hsing Kao, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, we observe the distinct VTH characteristics in the Au-free gate-first processing p-GaN/AIGaN/GaN HEMTs with two commonly used passivation layers, i.e., SiN and SiO2. The device with SiN shows a depletion-mode (D-mode) characteristic (VTH ∼ -5V) whereas the device with SiO2 passivation exhibits an enhancement-mode (E-mode) characteristic (VTH ∼ +0.7V). Furthermore, Transmission Line Measurement (TLM) devices are fabricated to investigate the effects of the passivation on two dimensional electron gas (2DEG) in p-GaN/AIGaN/GaN stack. The results indicate that a low Rsh is obtained while passivating device surface with SiN layer, suggesting that 2DEG is present, which is most probably due to an unfunctional p-GaN layer. The SIMS results indicate a high H-intensity in the p-GaN/AIGaN/GaN stack with a SiN passivation layer. Thus, P-GaN deactivation due to the formation of complex Mg-H after SiN passivation is proposed to explain the D-mode characteristic in the device with a SiN passivation layer.

原文English
主出版物標題2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728161693
DOIs
出版狀態Published - 20 7月 2020
事件2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 - Singapore, Singapore
持續時間: 20 7月 202023 7月 2020

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2020-July

Conference

Conference2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
國家/地區Singapore
城市Singapore
期間20/07/2023/07/20

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