Silicon nitride engineering: Role of hydrogen-bonding in Ge quantum dot formation

Kan Ping Peng, Yu Hong Kuo, Li Hsin Chang, Chien Nan Hsiao, Tsai Fu Chung, Thomas George, Horng Chin Lin, Pei Wen Li*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We report the lowering of the formation temperature of spherical-shaped Ge quantum dots (QDs) to 850 C from our previously-reported 900 C. This large reduction in QD formation temperature was achieved via the use of a hydrogenated, plasma-enhanced chemical-vapor deposited (PECVD) silicon nitride (SiN). The exquisite interplay between H, Ge, Si and O interstitials, controlling QD formation during the thermal oxidation of poly-SiGe layers deposited over PECVD-SixNy: H, is further explored in order to understand the underlying mechanisms. We have experimentally observed that the high hydrogen content of the PECVD-SixNy: H facilitates the lower-temperature (850 C) oxidation of the nitride layer, while simultaneously being able to generate smaller diameter, fully coalesced Ge QDs within. Such heterostructures of SiN coupled-Ge QDs are a fundamental building block for the ultimate fabrication of active SiN-based Ge photonic devices.

原文English
文章編號105018
頁數9
期刊Semiconductor Science and Technology
35
發行號10
DOIs
出版狀態Published - 10月 2020

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