TY - JOUR
T1 - Silicon nanowire field-effect transistor as label-free detection of hepatitis b virus proteins with opposite net charges
AU - Yong, Suh Kuan
AU - Shen, Shang Kai
AU - Chiang, Chia Wei
AU - Weng, Ying Ya
AU - Lu, Ming Pei
AU - Yang, Yuh Shyong
N1 - Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/11
Y1 - 2021/11
N2 - The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Al-though many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrys-talline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.
AB - The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Al-though many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrys-talline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.
KW - Biomarker
KW - Biosensor
KW - Chronic hepatitis B (CHB)
KW - Hepatitis B virus
KW - Hepatitis B virus surface antigen (HBsAg)
KW - Hepatitis B virus X protein (HBx)
KW - Hepatocellular carcinoma (HCC)
KW - Polycrystalline silicon field-effect transistor (pSiNWFET)
KW - Protein–protein interaction
KW - Silicon field-effect transistor (SiNWFET)
UR - http://www.scopus.com/inward/record.url?scp=85119617645&partnerID=8YFLogxK
U2 - 10.3390/bios11110442
DO - 10.3390/bios11110442
M3 - Article
C2 - 34821658
AN - SCOPUS:85119617645
SN - 0956-5663
VL - 11
JO - Biosensors and Bioelectronics
JF - Biosensors and Bioelectronics
IS - 11
M1 - 442
ER -