Silicon-germanium structure in surrounding-gate strained silicon nanowire field effect transistors

In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (R_SiGe) of silicon-germanium (SiGe) wire. Due to the higher electron mobility, the n-type FETs with strained silicon channel films do enhance driving capability (∼8% increment on the drain current) in comparison with the pure Si one. The leakage current and transfer characteristics, the threshold-voltage (V_t), the drain induced barrier height lowering (DIBL), and the gate capacitance (C_G) are estimated with respect to different gate length (L_G), gate bias (V_G), and R_SiGe. For short channel effects, such as V_t roll-off and DIBL, the surrounding-gate strained silicon nanowire FET sustains similar characteristics with the pure Si one.