## 摘要

This work highlights the work-function-fluctuation (WKF) of the strained Si₀.₆Ge₀.₄ p-n-p-n tunneling field-effect transistor (TFET) using nanosheet geometry at sub-3 nm technology nodes. The reported work exploits 3000 samples to signify the key results of several dc factors such as ON- and OFF-state currents ( <formula> <tex>$I_{ON}$</tex> </formula> and <formula> <tex>$I_{OFF}$</tex> </formula> ), threshold voltage (<formula> <tex>$V_{th}$</tex> </formula> ), and the subthreshold swing (SS). Fewer WKFs are identified for higher metal grain number (MGN) due to the shaped low grain size. Collective average energy reduction of 10-15 meV as low with high MGN and 40-60 meV as high with low MGN for a group of metal-grains closer to the tunneling junction is observed. This huge impact of energy reduction proportionally affects electron transport due to reduction in tunneling length. High variability in <formula> <tex>$V_{th}$</tex> </formula> (≥15%) is identified at progressively diminished MGN due to parabolic behavior of variation. Furthermore, marginal variation in SS, <formula> <tex>$I_{ON}$</tex> </formula> , and <formula> <tex>$I_{OFF}$</tex> </formula> are observed because of the WKF dependability over the subthreshold region of operation.

原文 | English |
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期刊 | IEEE Transactions on Electron Devices |

DOIs | |

出版狀態 | Accepted/In press - 2021 |