SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma

Pei-Wen Li*, E. S. Yang

*此作品的通信作者

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

SiGe gate oxide prepared at low temperatures (25-400°C) by electron cyclotron resonance (ECR) plasma is reported. 100-200 Å oxides were grown on Si0.8Ge0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.

原文English
頁(從 - 到)2938-2940
頁數3
期刊Applied Physics Letters
63
發行號21
DOIs
出版狀態Published - 1 12月 1993

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