SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers

Wei Yuan Chang, Guang Li Luo*, Yi Shuo Huang, Chun Lin Chu, Yao Jen Lee, Bo Yuan Chen, Chun Hsiung Lin, Wen Fa Wu, Wen-Kuan Yeh

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Due to the higher hole mobility and free of dislocations, the SiGe channel is more practical than the Ge channel for the industrial to push technology nodes further. In this work, the SiGe Gate-All-Around (GAA) p-FETs and Si GAA n-FETs were fabricated on the same Si/SiGe multilayer epitaxial wafer for the first time. The SiGe and Si multi-bridge channels (MBC) were respectively formed by Si interlayers selective etching and SiGe interlayers selective etching. For improving interface quality between Si and high-k, both Si and SiGe surfaces were processed with H2O2 treatment and forming gas (FG) annealing before the high-k gate deposition. The process scheme in this work can be easily applied to integrate SiGe GAA p-FETs and Si GAA n-FETs on the same wafer.

原文English
主出版物標題6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面21-23
頁數3
ISBN(電子)9781665421775
DOIs
出版狀態Published - 2022
事件6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
持續時間: 6 3月 20229 3月 2022

出版系列

名字6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
國家/地區Japan
城市Virtual, Online
期間6/03/229/03/22

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