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Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition
L. C. Chen
*
, D. M. Bhusari
, C. Y. Yang
, K. H. Chen
, T. J. Chuang
,
Ming-Chang Lin
, C. K. Chen
, Y. F. Huang
*
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應用化學系
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81
引文 斯高帕斯(Scopus)
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Keyphrases
Silicon Nitride
100%
Microwave Plasma Chemical Vapor Deposition (MPCVD)
100%
Substrate Temperature
100%
Crystalline Carbon Nitride
100%
Si-containing
100%
Wafer
50%
Auger Electron Spectroscopy
50%
X-ray Photoelectron Spectroscopy
50%
Carbon Atom
50%
Bonding Structure
50%
Large Grain
50%
Gas Mixture
50%
Si(111)
50%
Raman Spectroscopy
50%
Chemical Vapor Deposition Technique
50%
Nitrogen Atom
50%
Electron Microscopy
50%
Carbon Nitride Film
50%
C3N4
50%
Hard Materials
50%
Microscopic Investigation
50%
Raman Spectra
50%
Substitutional Element
50%
Crystallites
50%
X-ray Photoelectron Spectroscopy Analysis
50%
Core Level
50%
High Substrate Temperature
50%
Phase Content
50%
C 1s
50%
Multiple Bonding
50%
Nitride Complexes
50%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Nitride
100%
Microwave Plasma
100%
Substrate Temperature
100%
Ray Photoelectron Spectroscopy
66%
Thin Films
33%
Methane
33%
Substitutional Element
33%
Fine Grain
33%
Core Level
33%
Bonding Structure
33%
Hard Material
33%
Crystallite
33%
Gas Mixture
33%
Nitrogen Atom
33%
Raman Spectra
33%
Chemistry
Plasma Enhanced Chemical Vapor Deposition
100%
Oxalonitrile
100%
X Ray Photoemission Spectroscopy
66%
Ammonia
33%
Nitrogen Atom
33%
Auger Electron Spectroscopy
33%
Scanning Electron Microscopy
33%
Methane
33%
Carbon Atom
33%
Core Level
33%
Deposition Technique
33%
Electron Microscopy
33%
Crystallite
33%
Raman Spectroscopy
33%
Raman Spectrometry
33%
formation
33%
Raman Spectra
33%
Material Science
Film
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Carbon Nitride
100%
Silicon Nitride
50%
X-Ray Photoelectron Spectroscopy
50%
Thin Films
25%
Nitride Compound
25%
Scanning Electron Microscopy
25%
Electron Microscopy
25%
Auger Electron Spectroscopy
25%
Raman Spectroscopy
25%
Gas Mixture
25%
Crystallite
25%
Immunology and Microbiology
Blood Plasma
100%
X-Ray Photoelectron Spectroscopy
100%
Precursor
50%
Raman Spectroscopy
50%
Scanning Electron Microscopy
50%
Electron Microscopy
50%
Auger Electron Spectroscopy
50%
Chemical Engineering
Plasma Enhanced Chemical Vapor Deposition
100%
Carbon Nitride
100%
Film
100%
Methane
20%