Si-based condenser microphone by wafer bonding technique

Ray-Hua Horng*, Z. T. Yuan, K. Y. Hu, C. C. Chang

*此作品的通信作者

研究成果: Paper同行評審

摘要

This paper described the fabrication and characteristics of Si-based condenser microphone that is based on wafer bonding technology and semiconductor process. The microphone diaphragm and back-plate are defined on 4" silicon. Then, using wafer bonding with adhesive layer in a vacuum environment, the two wafers are bonded together to form a microphone. The microphones are characterized by bonding strength, bonding yield, frequency response and sensitivity. When microphone was finished, it was combined with the amplifier circuit, then examined its frequency response in the anechoic chamber. The device shows frequency response of -45.4 dBV/Pa (-33 dBV/Pa ref. 1 V/Pa) with 25 V bias in 1 kHz. In addition, the bonded sample can stand for dicing process and the dicing yield is above 90%. The bonding strength is above 5 kg/mm 2. A complete microphone chip after dicing which dimension is 2 mm×2 mm×0.6 mm.

原文English
頁面226-232
頁數7
出版狀態Published - 1 十二月 2005
事件207th ECS Meeting - Quebec, Canada
持續時間: 16 五月 200520 五月 2005

Conference

Conference207th ECS Meeting
國家/地區Canada
城市Quebec
期間16/05/0520/05/05

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