Si and Zn co-doped InGaN-GaN white light-emitting diodes

S. J. Chang; L. W. Wu; Y. K. Su; Cheng-Huang Kuo; W. C. Lai; Y. P. Hsu; J. K. Sheu; J. F. Chen; J. M. Tsai

doi:10.1109/TED.2002.808525

Si and Zn co-doped InGaN-GaN white light-emitting diodes

S. J. Chang^*, L. W. Wu, Y. K. Su, Cheng-Huang Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen, J. M. Tsai

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照明與能源光電研究所

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31 引文斯高帕斯（Scopus）

摘要

InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emission at 500-560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN band-edge-related blue emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In_0.3Ga_0.7N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x = 0.383, y = 0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In_0.3Ga_0.7N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.

原文	English
頁（從 - 到）	519-521
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	2
DOIs	https://doi.org/10.1109/TED.2002.808525
出版狀態	Published - 1 2月 2003

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@article{a5dc301b7cb9487d8d206dceb66878c6,

title = "Si and Zn co-doped InGaN-GaN white light-emitting diodes",

abstract = "InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emission at 500-560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN band-edge-related blue emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In0.3Ga0.7N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x = 0.383, y = 0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In0.3Ga0.7N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.",

author = "Chang, {S. J.} and Wu, {L. W.} and Su, {Y. K.} and Cheng-Huang Kuo and Lai, {W. C.} and Hsu, {Y. P.} and Sheu, {J. K.} and Chen, {J. F.} and Tsai, {J. M.}",

year = "2003",

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doi = "10.1109/TED.2002.808525",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Si and Zn co-doped InGaN-GaN white light-emitting diodes

AU - Chang, S. J.

AU - Wu, L. W.

AU - Su, Y. K.

AU - Kuo, Cheng-Huang

AU - Lai, W. C.

AU - Hsu, Y. P.

AU - Sheu, J. K.

AU - Chen, J. F.

AU - Tsai, J. M.

PY - 2003/2/1

Y1 - 2003/2/1

N2 - InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emission at 500-560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN band-edge-related blue emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In0.3Ga0.7N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x = 0.383, y = 0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In0.3Ga0.7N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.

AB - InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emission at 500-560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN band-edge-related blue emission. By increasing the DMZn mole flow rate to 360 nmole/min, we could achieve a Si and Zn co-doped In0.3Ga0.7N-GaN MQW LED with color temperature of 4100 K, color rendering index of 70, and color coordinates x = 0.383, y = 0.405. It was also found that the 20-mA forward voltage and the breakdown voltage of such Si and Zn co-doped In0.3Ga0.7N-GaN MQW LEDs were both smaller than those of the conventional phosphor-converted white LEDs.

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U2 - 10.1109/TED.2002.808525

DO - 10.1109/TED.2002.808525

M3 - Article

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EP - 521

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Si and Zn co-doped InGaN-GaN white light-emitting diodes

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