Short-wavelength responses enhanced porous-silicon heterojunction thin film photo-transistor

Y. C. Wang*, Bor-Shyh Lin, Ming-Che Chan

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The paper proposed a device with Al / Porous-Silicon / c-Si structures were fabricated and characterized. Experimental results showed that the short-wavelength responses in the developed devices were enhanced as compared to the silicon based homojunction transistors, this comparably medium optical gain indicated that the developed Porous-Silicon / c-Si heterojunction thin film photo-transistor got potential for practical applications The paper proposed a shortwavelength responses enhanced of the Si-based thin film phototransistors can be enhanced by introducing thin porous-layer as the base region of transistor. The porous process of device manufacture is suitable for applications in design of visible-light sensitive phototransistors. Therefore, the more applications of short-wavelength are the trend for bio-medical-detection.

原文English
主出版物標題Fiber-Based Technologies and Applications, FBTA 2014
發行者Optical Society of America (OSA)
頁面1-3
頁數3
ISBN(電子)1557522774
DOIs
出版狀態Published - 18 6月 2014
事件Fiber-Based Technologies and Applications, FBTA 2014 - Wuhan, China
持續時間: 18 6月 201421 6月 2014

出版系列

名字Optoelectronic Devices and Integration, OEDI 2014

Conference

ConferenceFiber-Based Technologies and Applications, FBTA 2014
國家/地區China
城市Wuhan
期間18/06/1421/06/14

指紋

深入研究「Short-wavelength responses enhanced porous-silicon heterojunction thin film photo-transistor」主題。共同形成了獨特的指紋。

引用此