Short-range order, microstructure and their correlation with light-induced degradation in hydrogenated amorphous silicon deposited at high growth rates by cathode heating technique

S. Chattopadhyay*, S. N. Sharma, Ratnabali Banerjee, D. M. Bhusari, S. T. Kshirsagar, Yan Chen, D. L. Williamson

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Hydrogenated amorphous silicon (a-Si:H) films were deposited at high growth rates by increasing the rf power density in a (SiH4+H2) discharge, while powder formation due to gas phase polymerization was controlled by heating the cathode together with the anode. A combination of Raman scattering, infrared absorption, and small angle x-ray scattering experiments was used to study the short-range order and microstructure of films deposited in different (dusty or otherwise) plasma conditions. The results were correlated with initial and light-soaked photoresponse to demonstrate that films with more microstructure and less short-range order were generally poorer.

原文English
頁(從 - 到)5208-5213
頁數6
期刊Journal of Applied Physics
76
發行號9
DOIs
出版狀態Published - 1994

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