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Short-Range Order and Charge Transport in SiO
x
: Experiment and Numerical Simulation
V. A. Gritsenko
*
, Yu N. Novikov,
Albert Chin
*
此作品的通信作者
電子研究所
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x
: Experiment and Numerical Simulation」主題。共同形成了獨特的指紋。
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Keyphrases
Simulation Experiment
100%
Numerical Simulation
100%
Silicon Oxide
100%
SiOx
100%
Charge Transport
100%
Short-range Order
100%
Potential Fluctuations
66%
X-ray Photoelectron Spectroscopy
33%
Chemical Composition
33%
Electric Potential
33%
Electric Field (E-field)
33%
Silicon Oxide Film
33%
Structure Model
33%
Oxide Structure
33%
Percolation Theory
33%
Maximum Amplitude
33%
Inhomogeneous Media
33%
Nanoscale Fluctuations
33%
Nonstoichiometric Silicon Oxide
33%
Electron Percolation
33%
Optical Absorption Spectroscopy
33%
Material Science
Silicon
100%
Short-Range Order
100%
Oxide Compound
80%
Film
40%
Percolation
40%
X-Ray Photoelectron Spectroscopy
20%
Oxide Film
20%
Absorption Spectroscopy
20%
Physics
Short-Range Order
100%
Silicon Oxide
100%
Percolation
40%
X Ray Spectroscopy
20%
Electric Fields
20%
Nanoscale
20%
Electromagnetic Absorption
20%
Absorption Spectroscopy
20%
Oxide Film
20%
Electric Potential
20%
Inhomogeneous Media
20%