TY - JOUR
T1 - Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors
AU - You, Wei Xiang
AU - Tsai, Chih Peng
AU - Su, Pin
PY - 2018/4/1
Y1 - 2018/4/1
N2 - Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.
AB - Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.
KW - 2D semiconductors
KW - Landau-Khalatnikov (L-K) equation
KW - ferroelectric FET
KW - high-k gate dielectrics
KW - negative-capacitance field-effect transistor (NCFET)
KW - short-channel effects
KW - subthreshold model
KW - transition-metal-dichalcogenide (TMD)
UR - http://www.scopus.com/inward/record.url?scp=85042845607&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2805716
DO - 10.1109/TED.2018.2805716
M3 - Article
AN - SCOPUS:85042845607
SN - 0018-9383
VL - 65
SP - 1604
EP - 1610
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -