Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

Wei Xiang You, Chih Peng Tsai, Pin Su*

*此作品的通信作者

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs.

原文English
頁(從 - 到)1604-1610
頁數7
期刊IEEE Transactions on Electron Devices
65
發行號4
DOIs
出版狀態Published - 1 4月 2018

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