Shielding of Backgating Effects in GaAs Integrated Circuits

C. P. Lee, Mau-Chung Chang

    研究成果: Article同行評審

    15 引文 斯高帕斯(Scopus)

    摘要

    Shielding of backgating effects in GaAs IC's by using Schottky metal, ohmic metal, and n--implant has been studied. Contrary to what is expected from the electrostatic principle, positive bias to the shielding bars enhances backgating. Negative bias to the Schottky shielding bars increases the threshold for backgating, effectively reducing the backgating effect. These phenomena are explained in terms of carrier injection controlled by the surface potential. The results indicate that backgating effects can be reduced through proper circuit layout.

    原文English
    頁(從 - 到)169-171
    頁數3
    期刊IEEE Electron Device Letters
    6
    發行號4
    DOIs
    出版狀態Published - 1 1月 1985

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