Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

M. Eizenberg*, H. Föll, King-Ning Tu

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研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

原文English
頁(從 - 到)547-549
頁數3
期刊Applied Physics Letters
37
發行號6
DOIs
出版狀態Published - 1 12月 1980

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