Shallow silicide contact

King-Ning Tu*, W. N. Hammer, J. O. Olowolafe

*此作品的通信作者

研究成果: Article同行評審

71 引文 斯高帕斯(Scopus)

摘要

Device miniaturization requires dimensional shrinkage not only in the lateral directions but also in the vertical direction. A silicide contact in a shallow junction Si device has to be shallow, which means that in forming the silicide it may not consume more than a few hundred angstroms of Si from the substrate. A general scheme of making such a shallow silicide contact is reported here. The scheme utilizes the effect of alloying to dilute the contact reaction, and it produces a shallow contact and a protective diffusion barrier at the same time. Results of Pt-Cr alloys are presented for illustration.

原文English
頁(從 - 到)1663-1668
頁數6
期刊Journal of Applied Physics
51
發行號3
DOIs
出版狀態Published - 1 12月 1980

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