Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.
|頁（從 - 到）||766-777|
|期刊||Journal of vacuum science & technology|
|出版狀態||Published - 1 1月 1981|
|事件||Proc of the Annu Symp of the Greater New York Chapter of the AVS on Metall of Adv Semicond Devices, 12th - Murray Hill, NJ, USA|
持續時間: 3 6月 1981 → 3 6月 1981