SHALLOW AND PARALLEL SILICIDE CONTACTS.

King-Ning Tu*

*此作品的通信作者

研究成果: Conference article同行評審

42 引文 斯高帕斯(Scopus)

摘要

Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0. 85 to 0. 75 ev) and low (0. 50 to 0. 40 ev) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel were analyzed.

原文English
頁(從 - 到)766-777
頁數12
期刊Journal of vacuum science & technology
19
發行號3
DOIs
出版狀態Published - 1 1月 1981
事件Proc of the Annu Symp of the Greater New York Chapter of the AVS on Metall of Adv Semicond Devices, 12th - Murray Hill, NJ, USA
持續時間: 3 6月 19813 6月 1981

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