Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Y. P. Huang; H. C. Liang; J. Y. Huang; Kuan-Wei Su; A. Li; Yung-Fu Chen; Kai-Feng Huang

doi:10.1364/AO.46.006273

Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Y. P. Huang, H. C. Liang, J. Y. Huang, Kuan-Wei Su, A. Li, Yung-Fu Chen^*, Kai-Feng Huang

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電子物理學系

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4 引文斯高帕斯（Scopus）

摘要

InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.

原文	English
頁（從 - 到）	6273-6276
頁數	4
期刊	Applied Optics
卷	46
發行號	25
DOIs	https://doi.org/10.1364/AO.46.006273
出版狀態	Published - 1 9月 2007

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abstract = "InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.",

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AU - Huang, Y. P.

AU - Liang, H. C.

AU - Huang, J. Y.

AU - Su, Kuan-Wei

AU - Li, A.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

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N2 - InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.

AB - InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 μJ at a pulse repetition rate of 55 kHz.

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JO - Applied Optics

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Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

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