Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Swatilekha Majumdar; Ying Chen; Boris Hudec; Tuo Hung Hou; Manan Suri

doi:10.1109/TED.2020.2964113

Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Swatilekha Majumdar^*, Ying Chen, Boris Hudec, Tuo Hung Hou, Manan Suri

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電子研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO₂/Al:TiO₂/TiN, TiN/TaO/HfO_x/TiON/TiN, and Al/AlO σ/Ta₂O_5-x/TaO_y/W. Through this model, simulation versus experimental error of less than 10% is achieved.

原文	English
文章編號	8972592
頁（從 - 到）	1348-1352
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	67
發行號	3
DOIs	https://doi.org/10.1109/TED.2020.2964113
出版狀態	Published - 3月 2020

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10.1109/TED.2020.2964113

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abstract = "In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO σ/Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.",

keywords = "Compact model, non-filamentary oxide-based random access memory (OxRAM), OxRAM, resistive switching",

author = "Swatilekha Majumdar and Ying Chen and Boris Hudec and Hou, {Tuo Hung} and Manan Suri",

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AU - Hudec, Boris

AU - Hou, Tuo Hung

AU - Suri, Manan

PY - 2020/3

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N2 - In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO σ/Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.

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Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

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