Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Swatilekha Majumdar*, Ying Chen, Boris Hudec, Tuo Hung Hou, Manan Suri

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO σ/Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.

原文English
文章編號8972592
頁(從 - 到)1348-1352
頁數5
期刊IEEE Transactions on Electron Devices
67
發行號3
DOIs
出版狀態Published - 3月 2020

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