TY - GEN
T1 - Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
AU - Hsu, Chung Wei
AU - Wang, I. Ting
AU - Lo, Chun Li
AU - Chiang, Ming Chung
AU - Jang, Wen Yueh
AU - Lin, Chen Hsi
AU - Hou, Tuo-Hung
PY - 2013/6/11
Y1 - 2013/6/11
N2 - To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.
AB - To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.
UR - http://www.scopus.com/inward/record.url?scp=84883399801&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84883399801
SN - 9784863483477
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - T166-T167
BT - 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
T2 - 2013 Symposium on VLSI Technology, VLSIT 2013
Y2 - 11 June 2013 through 13 June 2013
ER -