Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory

Chung Wei Hsu, I. Ting Wang, Chun Li Lo, Ming Chung Chiang, Wen Yueh Jang, Chen Hsi Lin, Tuo-Hung Hou

    研究成果: Conference contribution同行評審

    93 引文 斯高帕斯(Scopus)

    摘要

    To satisfy strict requirements of storage-class memory, a bipolar TaO x/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.

    原文English
    主出版物標題2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
    章節12-3
    頁面T166-T167
    頁數2
    出版狀態Published - 11 6月 2013
    事件2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
    持續時間: 11 6月 201313 6月 2013

    出版系列

    名字Digest of Technical Papers - Symposium on VLSI Technology
    ISSN(列印)0743-1562

    Conference

    Conference2013 Symposium on VLSI Technology, VLSIT 2013
    國家/地區Japan
    城市Kyoto
    期間11/06/1313/06/13

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